Doping-controllable high temperature magnetic semiconductor

被引：3
作者：
Deng, Xiaohui [1 ,2 ]
Dai, Jiayu [1 ,3 ]
Li, Zhenyu [2 ]
机构：
[1] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Hunan, Peoples R China
[2] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[3] Natl Univ Def Technol, Dept Phys, Changsha 410073, Hunan, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2021年 / 131卷
关键词：
Magnetic semiconductor; Curie temperature; Hole doping; DILUTED FERROMAGNETIC SEMICONDUCTOR; HALF-METALLICITY;
D O I：
10.1016/j.physe.2021.114731
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
It is urgently needed to explore new high temperature magnetic semiconductor or improve its Curie temperature through various physical or chemical methods. Here, we report a new two-dimensional (2D) CrOCl monolayer that has a relatively high Curie temperature. More importantly, it can be further enhanced to over room temperature through hole doping. The structure and the modulation method to improve spin order temperature in this paper thus may be applied in spintronics.
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页数：5
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