SPICE modelling of memcapacitor

被引：78
作者：
Biolek, D. [1 ]
Biolek, Z. [2 ]
Biolkova, V. [3 ]
机构：
[1] Brno Univ Technol, Dept Elect Engn Microelect, Univ Def, Brno, Czech Republic
[2] SSIER Roznov pR, Roznov Pr, Czech Republic
[3] Brno Univ Technol, Dept Radio Elect, Brno, Czech Republic
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 07期
关键词：
DOPANT DRIFT; MEMRISTOR;
D O I：
10.1049/el.2010.0358
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A methodology for SPICE modelling of a memcapacitor is described. The model is compounded of the submodel of the state-space system, representing the memory effect of the device, which depends on the concrete physical implementation of the device, and of a capacitor, the capacitance of which is controlled by the system state. The basic fingerprints of the memcapacitor are demonstrated in the example of a charge-controlled memcapacitor.
引用
收藏
页码：520 / 521
页数：2
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