Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy films

被引：2
作者：
Choi, WK
Bera, LK
Chen, JH
Feng, W
Pey, KL
Yoong, H
Mi, J
Zhang, F
Yang, CY
机构：
[1] Natl Univ Singapore, Dept Elect Engn, Microelect Lab, Singapore 117576, Singapore
[2] Santa Clara Univ, Microelect Lab, Santa Clara, CA 95053 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 75卷 / 2-3期
关键词：
silicon-germanium-carbon alloy films; rapid thermally oxidized film; X-ray diffraction spectroscopy; Raman spectroscopy;
D O I：
10.1016/S0921-5107(00)00359-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The properties of as-prepared and rapidly thermally oxidized Si1-x-yGexCy. alloy films have been examined using infrared, X-ray diffraction, and Raman techniques. The structural properties of the oxidized Si1-x-yGexCy film depend on the type of strain of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content such that the oxidized film compositions resemble that of Si1-xGex films. For tensile films, two broad layers co-exist in the oxidized films, one with a carbon content higher and the other lower than that required for full strain compensation. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：184 / 186
页数：3
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