Effect of H2 Carrier Gas on the Growth of GaN Nanowires on Si(111) Substrates by Metalorganic Chemical Vapor Deposition

被引：10

作者：

Ra, Yong-Ho ^{[1
]}

Navamathavan, Rangaswamy ^{[1
]}

Cha, Jun-Ho ^{[1
]}

Song, Ki-Young ^{[1
]}

Lim, Hong-Chul ^{[1
]}

Park, Ji-Hyeon ^{[1
]}

Kim, Dong-Wook ^{[1
]}

Lee, Cheul-Ro ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Semicond Mat Proc Lab, Sch Adv Mat Engn, Engn Coll,RCAMD, Chonju 561756, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

SEMICONDUCTOR NANOWIRES;

D O I：

10.1143/JJAP.49.045004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the morphological changes of GaN nanowires (NWs) induced by varying H-2 carrier gas flow rate. The GaN NWs were grown on Au-coated silicon (111) substrates by metalorganic chemical vapor deposition (MOCVD). The surface morphology and optical characterization of the grown GaN NWs were studied by field-emission scanning electron microscopy (FE-SEM) and photoluminescence (PL) and cathodoluminescence (CL) measurements, respectively. The GaN NWs with uniform diameters from bottom to top sizes ranging from 60 to 100 nm and lengths up to 2-3 mm were obtained. Energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the presence of gallium and nitrogen in the grown GaN NWs. It was observed that the lateral growth behavior of the GaN NWs prevailed in the absence of H-2 carrier gas. On the other hand, the vertically aligned growth tendency of the GaN NWs was induced by the supply of H-2 carrier gas. (C) 2010 The Japan Society of Applied Physics

引用

页码：0450041 / 0450044

页数：4

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