Preparation of CuInSe2 thin films with large grain by excimer laser ablation

被引:17
作者
Yoshida, A
Tanahashi, N
Tanaka, T
Demizu, Y
Yamamoto, Y
Yamaguchi, T
机构
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 441, Japan
[2] Fukui Coll Technol, Dept Elect Engn, Sabae 916, Japan
[3] Wakayama Coll Technol, Dept Elect Engn, Gobo 644077, Japan
关键词
CuInSe2; thin films; excimer laser ablation;
D O I
10.1016/S0927-0248(97)00093-7
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Thin films of CuInSe2 (CIS) were prepared by XeCl excimer laser ablation on glass substrates. The deposition was carried out at 550 degrees C and the target-substrate distance was changed from 15 to 60 mm. From XRD and EPMA measurements, all films showed the single-phase and stoichiometric chalcopyrite structure, independent of the distance. The deposition rate was large with the small distance. The surface morphology and cross-sectional SEM images were observed. The electrical conductivity measurements gave p-type conduction, and the mobility was improved with the smaller distance.
引用
收藏
页码:7 / 12
页数:6
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