Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm

被引：130
作者：
Nguyen, Binh-Minh [1 ]
Hoffman, Darin [1 ]
Wei, Yajun [1 ]
Delaunay, Pierre-Yves [1 ]
Hood, Andrew [1 ]
Razeghi, Manijeh [1 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 23期
关键词：
Cutoff wavelength - Delineation - Device thickness - Region thickness - Single-pass quantum efficiency;
D O I：
10.1063/1.2746943
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report the dependence of the quantum efficiency on device thickness of type-II InAs/GaSb superlattice photodetectors with a cutoff wavelength around 12 mu m. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 mu m cutoff wavelength photodiodes with a pi-region thickness of 6.0 mu m. The R(0)A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2x10(11) cm root Hz/W). (c) 2007 American Institute of Physics.
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