Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm

被引：132

作者：

Nguyen, Binh-Minh ^{[1
]}

Hoffman, Darin ^{[1
]}

Wei, Yajun ^{[1
]}

Delaunay, Pierre-Yves ^{[1
]}

Hood, Andrew ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 23期

关键词：

Cutoff wavelength - Delineation - Device thickness - Region thickness - Single-pass quantum efficiency;

D O I：

10.1063/1.2746943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the dependence of the quantum efficiency on device thickness of type-II InAs/GaSb superlattice photodetectors with a cutoff wavelength around 12 mu m. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 mu m cutoff wavelength photodiodes with a pi-region thickness of 6.0 mu m. The R(0)A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2x10(11) cm root Hz/W). (c) 2007 American Institute of Physics.

引用

页数：3

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