Nano-oxidation of semiconductor heterostructures with atomic force microscopes:: technology and applications

被引：1

作者：

Heinzel, T ^{[1
]}

Lüscher, S ^{[1
]}

Fuhrer, A ^{[1
]}

Salis, G ^{[1
]}

Held, R ^{[1
]}

Ensslin, K ^{[1
]}

Wegscheider, W ^{[1
]}

Bichler, M ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

OPTICAL DEVICES AND DIAGNOSTICS IN MATERIALS SCIENCE | 2000年 / 4098卷

关键词：

nanolithography; scanning probe microscopes; semiconductor nanostructures;

D O I：

10.1117/12.401643

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tunable nanostructures can be patterned in Ga[A1]As heterostructures with an atomic force microscope (AFM). Oxidizing the GaAs cap layer locally by applying a voltage to the AFM tip leads to depletion of the electron gas underneath the oxide. Here, we describe this type of AFM lithography as a tool to fabricate tunable nanostructures. Novel technological options are discussed, and the electronic properties of the resulting confinement is characterized. As an example for the versatility of this technique, we present electronic transport measurements on quantum wires.

引用

页码：52 / 64

页数：13

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