DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass

被引:22
作者
Abdel-All, A [1 ]
Elshafie, A
Elhawary, MM
机构
[1] Helwan Univ, Fac Sci, Dept Phys, Cairo, Egypt
[2] El Menoufia Univ, Fac Sci, Dept Phys, Shebin El Koom, Egypt
关键词
chalcogenide; switching; electric field;
D O I
10.1016/S0042-207X(00)00378-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical properties of Ge5As38Te57 have been carried out as a function of temperature at different de electric fields for the bulk and thin films. This material shows a non-ohmic behaviour by switching to a negative resistance state. The activation energy was found to decrease slowly as the electric field increases and increases again before switching to the negative region. The conduction is simply a field-dependent hopping mobility at low fields. The high-field conduction mechanisms have been explained in terms of the Poole-Frenkel effect and Schottky emission of carriers which is applicable to both bulk and thin films. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:845 / 853
页数:9
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