DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass

被引：22

作者：

Abdel-All, A ^{[1
]}

Elshafie, A

Elhawary, MM

机构：

[1] Helwan Univ, Fac Sci, Dept Phys, Cairo, Egypt

[2] El Menoufia Univ, Fac Sci, Dept Phys, Shebin El Koom, Egypt

来源：

VACUUM | 2000年 / 59卷 / 04期

关键词：

chalcogenide; switching; electric field;

D O I：

10.1016/S0042-207X(00)00378-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of Ge5As38Te57 have been carried out as a function of temperature at different de electric fields for the bulk and thin films. This material shows a non-ohmic behaviour by switching to a negative resistance state. The activation energy was found to decrease slowly as the electric field increases and increases again before switching to the negative region. The conduction is simply a field-dependent hopping mobility at low fields. The high-field conduction mechanisms have been explained in terms of the Poole-Frenkel effect and Schottky emission of carriers which is applicable to both bulk and thin films. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：845 / 853

页数：9

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