Chemical vapour deposition of selenium and tellurium films by UV laser photolysis of selenophene and tellurophene

被引：2

作者：

Pola, J ^{[1
]}

Bastl, Z

Subrt, J

Ouchi, A

机构：

[1] Acad Sci Czech Republ, Inst Chem Proc Fundamentals, Laser Chem Grp, CR-16502 Prague 6, Czech Republic

[2] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, CR-18223 Prague, Czech Republic

[3] Acad Sci Czech Republ, Inst Inorgan Chem, CZ-25068 Rez, Czech Republic

[4] MITI, AIST, Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED ORGANOMETALLIC CHEMISTRY | 2000年 / 14卷 / 11期

关键词：

selenophene; tellurophene; UV laser photolysis; chemical vapour deposition; selenium films; tellurium films;

D O I：

10.1002/1099-0739(200011)14:11<715::AID-AOC63>3.0.CO;2-0

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Excimer laser-induced photolysis of gaseous selenophene and tellurophene: affords gaseous 1-buten-3-yne and ethyne (as major products) and butadiyne (a very minor product) and results in chemical vapour deposition of selenium and tellurium films. The film properties were characterized by XPS and SEM techniques and by UV spectroscopy. Copyright (C) 2000 John Wiley & Sons, Ltd.

引用

页码：715 / 720

页数：6

共 26 条

[1]

Al-Abdella R. B., 1980, Optics and Spectroscopy, V48, P625

[2] PHOTOENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS USING DIETHYLZINC AND DIMETHYLSELENIDE [J].