Structural and optical changes in AS2S3 thin films induced by light ion irradiation

被引:20
作者
Ivan, I
Veres, M
Pócsik, I
Kokenyesi, S
机构
[1] Univ Debrecen, Dept Expt Phys, H-4026 Debrecen, Hungary
[2] Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2004年 / 201卷 / 14期
关键词
D O I
10.1002/pssa.200406890
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of H+ and D+ ion irradiation and laser illumination on the optical absorption edge, the refractive index and the Raman scattering spectra of as-deposited and annealed As2S3 films have been investigated. It was established, that a significant similarity exists between optical changes induced in As2S3 films by light illumination and by irradiation with light ions and also between structural changes thought to be responsible for these effects. The changes are connected with electron excitation processes in both cases and further initiation of atomic rearrangements within the amorphous phase.
引用
收藏
页码:3193 / 3199
页数:7
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