Hysteresis reversion in graphene field-effect transistors

被引：78
|
作者：
Liao, Zhi-Min [1 ]
Han, Bing-Hong [1 ]
Zhou, Yang-Bo [1 ]
Yu, Da-Peng [1 ]
机构：
[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
来源：
JOURNAL OF CHEMICAL PHYSICS | 2010年 / 133卷 / 04期
关键词：
OXIDE SHEETS; VAPOR;
D O I：
10.1063/1.3460798
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
To enhance performances of graphene/SiO2 based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO2 interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO2 interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460798]
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页数：4
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