Determination of Band Structure at GaAs/4H-SiC Heterojunctions

被引：3

作者：

Liang, J. B. ^{[1
]}

Shimizu, S. ^{[1
]}

Arai, M. ^{[2
]}

Shigekawa, N. ^{[1
]}

机构：

[1] Osaka City Univ, Grad Sch Engn, Sumiyoshi, Osaka 5588585, Japan

[2] New Japan Radio Co Ltd, Fujimino, Saitama 3568510, Japan

来源：

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14 | 2016年 / 75卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

ROOM-TEMPERATURE; WAFERS; SILICON;

D O I：

10.1149/07509.0221ecst

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of thermal annealing process on the interface in p+-GaAs/n-4H-SiC heterojunctions fabricated by using surfaceactivated bonding (SAB) were investigated. It was found by measuring their current-voltage (I-V) characteristics that the reverse-bias current and the ideality factor were extracted to be 7.57. 10(-7) A/cm(2) and 1.33, respectively, for the junctions annealed at 400 degrees C. The flat-band voltage obtained from capacitance-voltage (C-V) measurements was found to be 1.29 eV, which is almost consistent with the turn-on voltage extracted from I-V characteristics. These results suggest that the SAB-based GaAs/4H-SiC heterojunctions are applicable for fabricating highfrequency power devices.

引用

页码：221 / 227

页数：7

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