Room-temperature terahertz heterodyne mixing in GaAs commercial transistors

被引：0
|
作者：
Tohme, L. [1 ]
Blin, S. [1 ]
Nouvel, P. [1 ]
Varani, L. [1 ]
Penarier, A. [1 ]
机构：
[1] Univ Montpellier 2, CNRS, IES UMR 5214, Teralab, F-34095 Montpellier, France
来源：
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report on the detection of terahertz heterodyne mixing in GaAs ultra-low noise Pseudomorphic High Electron Mobility Transistors (pHEMT) at room temperature. For this purpose, we used two 0.300 THz sources in order to generate mixing up to 45 GHz.
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页数：2
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