Pulsed laser deposition BTS thin films: The role of substrate temperature

被引:6
作者
Chen, Shengtian
Yu, Shihui
Zhang, Bowen
Zhang, Jieling
Ma, Baogang
Liu, Qing
Zhang, Weifeng [1 ]
机构
[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475001, Peoples R China
基金
中国国家自然科学基金;
关键词
Films; Grain size; Dielectric properties; Capacitors; ELECTRICAL-PROPERTIES; MICROSTRUCTURE; PB(ZR; TI)O-3; BEHAVIOR;
D O I
10.1016/j.ceramint.2016.01.190
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
BaSn0.15Ti0.85O3 (BTS) thin films were deposited on Pt/Ti/SiO2/Si(1 0 0) substrate by pulsed laser deposition and the effects of substrate temperature on their structure, dielectric properties and leakage current density were investigated. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of the BTS thin films which exhibit a polycrystalline perovskite structure if the substrate temperature ranges within 550-750 degrees C. The dielectric constant and loss tangent of the BTS thin films deposited at 650 degrees C are 341 and 0.009 at 1 MHz, respectively, the tunability is 72.1% at a de bias field of 400 kV/cm, while the largest figure of merit (FOM) is 81.1. The effect of the substrate temperature on the leakage current of the BTS thin films is discussed. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:9341 / 9346
页数:6
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