Buffer layer free large area bi-layer graphene on SiC(0001)

被引：70

作者：

Virojanadara, C. ^{[1
]}

Zakharov, A. A. ^{[2
]}

Yakimova, R. ^{[1
]}

Johansson, L. I. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Lund Univ, Maxlab, S-22100 Lund, Sweden

来源：

SURFACE SCIENCE | 2010年 / 604卷 / 02期

关键词：

Graphene; Bi-layer; Epitaxial; Silicon carbide; LEEM; PES; Hydrogenation; LEED; ELECTRONIC-STRUCTURE; HYDROGENATION; 6H-SIC(0001); GROWTH;

D O I：

10.1016/j.susc.2009.11.011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：L4 / L7

页数：4