Buffer layer free large area bi-layer graphene on SiC(0001)

被引：70
作者：
Virojanadara, C. [1 ]
Zakharov, A. A. [2 ]
Yakimova, R. [1 ]
Johansson, L. I. [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
[2] Lund Univ, Maxlab, S-22100 Lund, Sweden
来源：
SURFACE SCIENCE | 2010年 / 604卷 / 02期
关键词：
Graphene; Bi-layer; Epitaxial; Silicon carbide; LEEM; PES; Hydrogenation; LEED; ELECTRONIC-STRUCTURE; HYDROGENATION; 6H-SIC(0001); GROWTH;
D O I：
10.1016/j.susc.2009.11.011
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：L4 / L7
页数：4
相关论文
共 11 条
  • [1] Dirac particles in epitaxial graphene films grown on SiC
    Berger, Claire
    Wu, Xiaosong
    First, Phillip N.
    Conrad, Edward H.
    Li, Xuebin
    Sprinkle, Michael
    Hass, Joanna
    Varchon, Francois
    Magaud, Laurence
    Sadowski, Marcin L.
    Potemski, Marek
    Martinez, Gerard
    de Heer, Walt A.
    [J]. ADVANCES IN SOLID STATE PHYSICS, 2008, 47 : 145 - +
  • [2] Photoemission studies of graphene on SiC: Growth, interface, and electronic structure
    Bostwick, A.
    Emtsev, K. V.
    Horn, K.
    Huwald, E.
    Ley, L.
    McChesney, J. L.
    Ohta, T.
    Riley, J.
    Rotenberg, E.
    Speck, F.
    Seyller, Th.
    [J]. ADVANCES IN SOLID STATE PHYSICS, 2008, 47 : 159 - +
  • [3] Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
    Elias, D. C.
    Nair, R. R.
    Mohiuddin, T. M. G.
    Morozov, S. V.
    Blake, P.
    Halsall, M. P.
    Ferrari, A. C.
    Boukhvalov, D. W.
    Katsnelson, M. I.
    Geim, A. K.
    Novoselov, K. S.
    [J]. SCIENCE, 2009, 323 (5914) : 610 - 613
  • [4] Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
  • [5] Graphene: Status and Prospects
    Geim, A. K.
    [J]. SCIENCE, 2009, 324 (5934) : 1530 - 1534
  • [6] Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
    Hibino, H.
    Kageshima, H.
    Maeda, F.
    Nagase, M.
    Kobayashi, Y.
    Yamaguchi, H.
    [J]. PHYSICAL REVIEW B, 2008, 77 (07):
  • [7] Martensson P, 1997, PHYS STATUS SOLIDI B, V202, P501, DOI 10.1002/1521-3951(199707)202:1<501::AID-PSSB501>3.0.CO
  • [8] 2-H
  • [9] Hydrogenation of 6H-SiC as a surface passivation stable in air
    Sieber, N
    Mantel, BF
    Seyller, T
    Ristein, J
    Ley, L
    [J]. DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 1291 - 1294
  • [10] Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)
    Virojanadara, C.
    Yakimova, R.
    Osiecki, J. R.
    Syvajarvi, M.
    Uhrberg, R. I. G.
    Johansson, L. I.
    Zakharov, A. A.
    [J]. SURFACE SCIENCE, 2009, 603 (15) : L87 - L90
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