Thin-film deposition of Cu2O by reactive radio-frequency magnetron sputtering

被引：129

作者：

Ishizuka, S ^{[1
]}

Maruyama, T ^{[1
]}

Akimoto, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 8A期

关键词：

cuprous oxide; Cu2O; thin film; mobility; sputtering method; solar cell;

D O I：

10.1143/JJAP.39.L786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deposition conditions of cuprous oxide (Cu2O) thin films on glass substrates by reactive radio-frequency (rf) magnetron sputtering method were studied. The substrate temperature was found to be important for obtaining high-quality films, and the optimum substrate temperature was about 500 degrees C. The Cu2O deposited at 500 degrees C shows a band-gap energy of about 2.0 eV and a typical hole concentration of the order of 10(15) cm(-3) with a Hall mobility of 60 cm(2)/V.s, which is the highest mobility reported thus far.

引用

页码：L786 / L788

页数：3

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