Thin-film deposition of Cu2O by reactive radio-frequency magnetron sputtering

被引:129
作者
Ishizuka, S [1 ]
Maruyama, T [1 ]
Akimoto, K [1 ]
机构
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 8A期
关键词
cuprous oxide; Cu2O; thin film; mobility; sputtering method; solar cell;
D O I
10.1143/JJAP.39.L786
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deposition conditions of cuprous oxide (Cu2O) thin films on glass substrates by reactive radio-frequency (rf) magnetron sputtering method were studied. The substrate temperature was found to be important for obtaining high-quality films, and the optimum substrate temperature was about 500 degrees C. The Cu2O deposited at 500 degrees C shows a band-gap energy of about 2.0 eV and a typical hole concentration of the order of 10(15) cm(-3) with a Hall mobility of 60 cm(2)/V.s, which is the highest mobility reported thus far.
引用
收藏
页码:L786 / L788
页数:3
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