Synthesis and characterization of Cu2ZnSnSe4 nanocrystals prepared by one pot route

被引:3
作者
Wang, Tingting [1 ]
Chen, Qinmiao [2 ]
Chen, Jin [1 ]
Zhou, Fangfang [1 ]
Jia, Zhen [1 ]
Dou, Xiaoming [2 ,3 ]
Zhuang, Songlin [1 ]
机构
[1] Shanghai Univ Sci & Technol, Shanghai Key Lab Modern Opt Syst, Engn Res Ctr Opt Instrument & Syst, Minist Educ, Shanghai 200093, Peoples R China
[2] E China Univ Sci & Technol, Dept Phys, Coll Sci, Shanghai 200237, Peoples R China
[3] Waseda Univ, Consolidated Res Inst Adv Sci & Med Care, Shinjuku Ku, Tokyo 1620041, Japan
基金
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词
Cu2ZnSnSe4; nanocrystals; one-pot route;
D O I
10.1002/crat.201400167
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Quaternary compound Cu2ZnSnSe4 (CZTSe) is one of the most promising absorber layer materials for thin film solar cells. In present work, the CZTSe nanocrystals were successfully synthesized via one pot route, and the influences of reaction temperature on the structural, compositional, morphological and optical properties of as-synthesized CZTSe nanocrystals were investigated in detail via X-ray powder diffraction (XRD), energy dispersive X-ray spectrometry (EDS), transmission electron microscopy (TEM) and UV-Vis spectrophotometry, respectively. The characterization results of as-synthesized nanocrystals, under optimal synthesis condition (250 degrees C, 1 h), indicated that the nanocrystals was monodispersed with polycrystalline, the size was in the range of 10-15 nm, and the band gap energy was around 1.44 eV which is very closed to the best band gap energy for the solar cell. All results suggested that the as-synthesized CZTSe nanocrystals were good light absorber layer material for thin film solar cell.
引用
收藏
页码:808 / 812
页数:5
相关论文
共 17 条
  • [1] AdhiWibowo R., 2010, J PHYS CHEM SOLIDS, V71, P1702
  • [2] Growth and characterization of co-evaporated Cu2ZnSnSe4 thin films for photovoltaic applications
    Babu, G. Suresh
    Kumar, Y. B. Kishore
    Bhaskar, P. Uday
    Raja, V. Sundara
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (20)
  • [3] Effect of post-deposition annealing on the growth of Cu2ZnSnSe4 thin films for a solar cell absorber layer
    Babu, G. Suresh
    Kumar, Y. B. Kishore
    Bhaskar, P. Uday
    Raja, V. Sundara
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (08) : 085023
  • [4] A mild solvothermal route to kesterite quaternary Cu2ZnSnS4 nanoparticles
    Cao, M.
    Shen, Y.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 1117 - 1120
  • [5] One-pot synthesis of high-quality zinc-blende CdS nanocrystals
    Cao, YC
    Wang, JH
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (44) : 14336 - 14337
  • [6] Solvothermal synthesis and characterization of quaternary Cu2ZnSnSe4 particles
    Du, Yan-Fang
    Zhou, Wen-Hui
    Zhou, Yan-Li
    Li, Peng-Wei
    Fan, Jun-Qi
    He, Jing-Jing
    Wu, Si-Xin
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (02) : 214 - 217
  • [7] Fabrication of 7.2% Efficient CZTSSe Solar Cells Using CZTS Nanocrystals
    Guo, Qijie
    Ford, Grayson M.
    Yang, Wei-Chang
    Walker, Bryce C.
    Stach, Eric A.
    Hillhouse, Hugh W.
    Agrawal, Rakesh
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (49) : 17384 - 17386
  • [8] HAHN H, 1965, NATURWISSENSCHAFTEN, V52, P426
  • [9] ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS
    ITO, K
    NAKAZAWA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2094 - 2097
  • [10] Thermal analysis and synthesis from the melts of Cu-based quaternary compounds Cu-III-IV-VI, and Cu2-II-IV-VI4 (II = Zn, Cd;: III=Ga, In;: IV=Ge, Sn; VI=Se)
    Matsushita, H
    Maeda, T
    Katsui, A
    Takizawa, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 416 - 422