Electrical behaviour of laser-damaged silicon photodiodes

被引:14
作者
Moeglin, JP
Gautier, B
Joeckle, R
Bolmont, D
机构
[1] Inst Franco Allemand Rech St Louis, F-68301 St Louis, France
[2] Univ Haute, Fac Sci & Tech, Lab LPSE, CNRS, F-68200 Mulhouse, France
关键词
D O I
10.1016/S0143-8166(97)00054-7
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A measurement of the electrical parameters degradation of Si photodiodes irradiated by laser visible light has been performed. The laser is a Q-switched Nd:YAG, frequency doubled, operated in single pulse mode of 4 ns duration. The applied fluence levels range up to 90 J/cm(2). Two kinds of irradiation process were applied: either a part of the detector active area was irradiated in single pulse mode, or a scanning of the whole detector active area was performed with successive identical pulses. It has been shown that the fluence necessary to induce significant changes (local decrease of 35%) in responsivity is several times the surface melting threshold fluence (0.5 J/cm(2)). Conversely, the dark current is the most sensitive parameter, increasing by about four times for high irradiation. The in-depth dopant distribution is altered by high fluence irradiation in a way that cannot be explained by simple thermal modelling. (C) 1997 Published by Elsevier Science Ltd.
引用
收藏
页码:317 / 330
页数:14
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