Device Modeling and Circuit Design for Scalable Beyond-CMOS Computing

被引:3
|
作者
Hu, Xuan [1 ]
Hassan, Naimul [1 ]
Brigner, Wesley H. [1 ]
Chauwin, Maverick [1 ,2 ]
Friedman, Joseph S. [1 ]
机构
[1] Univ Texas Dallas, Elect & Comp Engn, Richardson, TX 75083 USA
[2] Ecole Polytech, Dept Phys, Palaiseau, France
关键词
emerging technology; spintronics; compact modeling; ambipolarity; neuromorphic computing;
D O I
10.1109/VLSI-SOC46417.2020.9344091
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Emerging technologies provide potential solutions to overcome the limitations of modern CMOS technologies. Specifically, as power density limitations impede further CMOS scaling, emerging technologies including spintronics, memristors, ambipolar transistors, and other beyond-CMOS devices are promising replacements for conventional CMOS transistors due to features such as non-volatility, low energy consumption, high operation speed, or high logical expressiveness. Specifically, we have evaluated spintronic technologies such as domain wall-magnetic tunnel junctions (DW-MTJs) and magnetic skyrmions that are particularly exciting for highly-efficient non-volatile information processing. Additionally, we have explored unconventional electronic switching devices including ambipolar transistors and memristors as replacements to CMOS and for hybrid emerging technology-CMOS computing systems.
引用
收藏
页码:210 / 211
页数:2
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