New design of InGaAs-InGaAlAs MQW electroabsorption modulator for high-speed all-optical wavelength conversion

被引:8
作者
El Dahdah, N [1 ]
Decobert, J
Shen, A
Bouchoule, S
Kazmierski, C
Aubin, G
Benkelfat, BE
Ramdane, A
机构
[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[2] Alcatel Opto, F-91460 Marcoussis, France
[3] Inst Natl Telecommun, F-91011 Evry, France
关键词
photogenerated carrier sweep-out time; polarization-dependence loss (PDL); power saturation; wavelength conversion;
D O I
10.1109/LPT.2004.834852
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have optimized the structure of InGaA1As multiple quantum-well electroabsorption modulators for all-optical signal processing. As wavelength conversion is a key function for all-optical telecommunication network, we have based our optimization upon the main parameters of this function, namely, polarization insensitivity, exciton saturation, and photogenerated carrier sweep-out time. Four samples have been studied with different well tensile strain and barrier height.We find low polarization dependence over a range of applied bias. Less than 10-ps absorption-saturation recovery time at lower biases and smaller saturation power than in the literature are reported.
引用
收藏
页码:2302 / 2304
页数:3
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