X-ray diffraction analysis of the defect structure in epitaxial GaN

被引：313

作者：

Heinke, H ^{[1
]}

Kirchner, V ^{[1
]}

Einfeldt, S ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1314877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in (001)-oriented GaN epitaxial layers. For this, (00l) and (hkl) Bragg reflections with h or k nonzero were studied, the latter one measured in skew symmetric diffraction geometry. The defect analysis was applied to a variety of GaN layers grown by molecular-beam epitaxy under very different conditions. The outcome is a fundamental correlation between the densities of edge- and screw-type dislocations. (C) 2000 American Institute of Physics. [S0003-6951(00)02740-6].

引用

页码：2145 / 2147

页数：3

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