We investigate the pressure effect of the electrical resistivity and magnetization of Ce0.8La0.2B6. The situation in which phase IV stably exists inside phase II at H = 0T could be realized by applying a pressure above P similar to 1.1 GPa. This originates from the fact that the stability of phase II under pressure is larger than those of phases IV and III. The results seem to be difficult to reproduce by taking the four interactions of Gamma(5u)-type AFO, O-xy-type AFQ, T-xyz-type AFO, and AF exchange into account within a mean-field calculation framework.
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Aoyama Gakuin Univ, Dept Phys, Setagaya Ku, Tokyo 1578572, JapanAoyama Gakuin Univ, Dept Phys, Setagaya Ku, Tokyo 1578572, Japan
Takagiwa, Hiroyuki
Ohishi, Kazuki
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Aoyama Gakuin Univ, Dept Phys, Setagaya Ku, Tokyo 1578572, JapanAoyama Gakuin Univ, Dept Phys, Setagaya Ku, Tokyo 1578572, Japan
Ohishi, Kazuki
Akimitsu, Jun
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Aoyama Gakuin Univ, Dept Phys, Setagaya Ku, Tokyo 1578572, JapanAoyama Gakuin Univ, Dept Phys, Setagaya Ku, Tokyo 1578572, Japan
Akimitsu, Jun
Higemoto, Wataru
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High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, JapanAoyama Gakuin Univ, Dept Phys, Setagaya Ku, Tokyo 1578572, Japan