ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

被引：116

作者：

Hongsingthong, Aswin ^{[1
]}

Krajangsang, Taweewat ^{[1
]}

Yunaz, Ihsanul Afdi ^{[1
]}

Miyajima, Shinsuke ^{[1
]}

Konagai, Makoto ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, PVREC, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 05期

关键词：

A-SI-H; DEPOSITION; MORPHOLOGY; EFFICIENCY; TCO;

D O I：

10.1143/APEX.3.051102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We successfully increased the haze value of zinc oxide (ZnO) films fabricated using metal-organic chemical vapor deposition (MOCVD) by conducting glass-substrate etching before film deposition. It was found that with increasing the glass treatment time, the surface morphology of ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like multi texture. Further, the rms roughness and the haze value of the films increased remarkably. Using ZnO films with a high haze value as front transparent conductive oxide (TCO) films in hydrogenated microcrystalline silicon (mu c-Si:H) solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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