MONTE CARLO OPTIMIZATION OF REDUNDANCY OF NANOTECHNOLOGY COMPUTER MEMORIES IN THE CONDITIONS OF BACKGROUND RADIATION

被引：12
作者：
Dolicann, Edin C. [1 ]
Fetahovic, Irfan S. [1 ]
机构：
[1] State Univ Novi Pazar, Novi Pazar, Serbia
来源：
NUCLEAR TECHNOLOGY & RADIATION PROTECTION | 2018年 / 33卷 / 02期
关键词：
nanotechnology computer memory; optimization; redundancy; Monte Carlo simulation; radiation; THIN-FILM; DYNAMICS; SILICON; NUCLEAR;
D O I：
10.2298/NTRP1802208D
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation method and experimental procedure. Then, by using the statistical enlargement law, we have performed the analysis of redundancy optimization of MOS structure for nanotechnology computers, under the influence of background radiation, and obtained more than satisfying results.
引用
收藏
页码：208 / 216
页数：9
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