Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well

被引：8

作者：

Dunford, RB

Popovic, D

Pollak, FH

Noble, TF

机构：

[1] CUNY City Coll, Dept Phys, New York, NY 10031 USA

[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA

[3] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA

[4] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 06期

关键词：

D O I：

10.1063/1.367128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high electron density Al0.2Ca0.8As/In0.2Ga0.8As/GaAs quantum well exhibited the integer quantum Hall effect at even-integer filling factors nu=4,6,.. and 24, only. The energy gaps and pre-exponential factors were determined. A carrier effective mass of m* = 0.082m(e) was found. The ratio of the transport relaxation time to the quantum lifetime (alpha=3.9+/-0.3) indicated that the dominant scattering mechanism was long-range remote ion scattering. At 30 mK, the carrier density in the dark was 1.35x10(12) cm(-2), which increased (due to the persistent photoconductivity effect) to 1.76x10(12) cm(-2) upon illumination, accompanied by a similar improvement in mobility. (C) 1998 American Institute of Physics.

引用

页码：3144 / 3147

页数：4

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