Amorphous films of CuInSe2 were deposited on glass substrate by flash evaporation of source materials. The films were found to be p-type semiconductors. The direct optical band-gap energy was obtained to be 1.21-1.41 eV. The film DC conductivity ranged from 1.2-5.7 S cm(-1) at 285 K for different film thickness with corresponding activation energy of 55.5-301 meV. From temperature dependence of conductivity, the carrier transport was interpreted to be due to band conduction above 270 K. (C) 2000 Elsevier Science B.V. All rights reserved.
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Chungju Natl Univ, Dept Mat Sci & Engn, NT Lab, Chungju 380702, Chungbuk, South KoreaChungju Natl Univ, Dept Mat Sci & Engn, NT Lab, Chungju 380702, Chungbuk, South Korea
Cho, KW
Kim, IH
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Chungju Natl Univ, Dept Mat Sci & Engn, NT Lab, Chungju 380702, Chungbuk, South KoreaChungju Natl Univ, Dept Mat Sci & Engn, NT Lab, Chungju 380702, Chungbuk, South Korea
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Kongunadu Arts & Sci Coll, Res & Dev, Dept Phys, Coimbatore 641029, Tamil Nadu, IndiaKongunadu Arts & Sci Coll, Res & Dev, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Sathyamoorthy, R
Senthilarasu, S
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机构:Kongunadu Arts & Sci Coll, Res & Dev, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Senthilarasu, S
Lalitha, S
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Lalitha, S
Subbarayan, A
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Subbarayan, A
Natarajan, K
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Natarajan, K
Mathew, X
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机构:Kongunadu Arts & Sci Coll, Res & Dev, Dept Phys, Coimbatore 641029, Tamil Nadu, India