Optical and electrical properties of flash-evaporated amorphous CuInSe2 films

被引：22

作者：

Sakata, H ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Tokai Univ, Dept Appl Chem, Hiratsuka, Kanagawa 2591292, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2000年 / 63卷 / 03期

关键词：

CuInSe2; amorphous films; flash evaporation; electrical conductivity; optical absorption edge;

D O I：

10.1016/S0927-0248(00)00032-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Amorphous films of CuInSe2 were deposited on glass substrate by flash evaporation of source materials. The films were found to be p-type semiconductors. The direct optical band-gap energy was obtained to be 1.21-1.41 eV. The film DC conductivity ranged from 1.2-5.7 S cm(-1) at 285 K for different film thickness with corresponding activation energy of 55.5-301 meV. From temperature dependence of conductivity, the carrier transport was interpreted to be due to band conduction above 270 K. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：259 / 265

页数：7

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