In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives

被引:165
作者
Ji, Bing [1 ]
Song, Xueguan [1 ]
Cao, Wenping [2 ]
Pickert, Volker [1 ]
Hu, Yihua [3 ]
Mackersie, John William [3 ]
Pierce, Gareth [3 ]
机构
[1] Newcastle Univ, Sch Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Queens Univ Belfast, Sch Elect Elect Engn & Comp Sci, Belfast BT9 5AH, Antrim, North Ireland
[3] Univ Strathclyde, Dept Elect & Elect Engn, Glasgow G1 1XQ, Lanark, Scotland
基金
英国工程与自然科学研究理事会;
关键词
Electric vehicles (EVs); fault diagnosis; insulated gate bipolar transistors (IGBTs); prognostics and health management; reliability; thermal variable measurement; 200; DEGREES-C; THERMAL IMPEDANCE; POWER SEMICONDUCTORS; RELIABILITY; TECHNOLOGIES; OPERATION; INVERTERS; LIFETIME; FAILURE; DEVICES;
D O I
10.1109/TPEL.2014.2318991
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.
引用
收藏
页码:1535 / 1543
页数:9
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