Spin lifetime in electron-doped InP quantum dots

被引：0
|
作者：
Masumoto, Y. [1 ]
Pal, B. [1 ]
Oguchi, S. [1 ]
Ikezawa, M. [1 ]
机构：
[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
spin; quantum dot; InP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Spin relaxation of electrons doped in InP quantum dots was studied by means of luminescence pump-probe and Hanle measurements, Optical pumping makes spins of doped electrons to be oriented in parallel to the helicity of the circularly polarized excitation. The luminescence pump-probe showed the spin orientation of the doped electrons decay on a millisecond time-scale. Hanle measurement clarified the spin dephasing relaxation time of doped electrons is 1.7 ns which is explained by the frozen fluctuation of nuclear spins.
引用
收藏
页码：961 / +
页数：2
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