Annealing characteristics of native defects in low-temperature-grown MBE GaAs

被引：0
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作者：
Darmo, J
Dubecky, F
Kordos, P
Forster, A
机构：
来源：
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96) | 1996年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep-level states in low-temperature-grown MBE GaAs are analyzed from the viewpoint of thermal stability, Gallium vacancy V-Ga-related states have two annealing stages with the on-set temperature at about 310 and 430 degrees C. Low temperature stage is connected with mobile arsenic interstitial As-i, while an interaction between V-Ga and arsenic antiside As-Ga is dominant in the later stage. Essential annealing kinetic charac teristics were determined for both stages, Finally, the migration enthalpy for As-Ga and the formation enthalpy of annealing of the EL6 state were estimated.
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页码：67 / 70
页数：4
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