The influence of the chip-scale-package on the functioning and reliability of RF-MEMS switches

被引：0

作者：

Song Ming-Xin ^{[1
]}

Zhu Min ^{[1
]}

He Xun-Jun ^{[1
]}

Yin Jing-Hua ^{[1
]}

机构：

[1] Harbin Univ Sci & Technol, Sch Appl Sci, Harbin 150080, Peoples R China

来源：

ICEPT: 2006 7TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the influence of materials and structures inside a package on the functioning and reliability of chip-scale-package RF-MEMS switches. It is shown that materials and structures strongly influence electrical performance characteristics such as the switching insertion loss of switches. By computer simulation design for a RF MEMS switches and its package, a model is built with choiceness performance characteristics. Especially, the pull-up electrode can increase reliability of the device, which has extremely low insertion loss of -0.8 dB and a high isolation of -33 dB up to 20 GHz. The packaging process can be applied to process wafer of RF MEMS switching devices. This work will help designers of RF-MEMS switches remove redundant features optimize structures in MEMS component packages to get maximize performance and help drive cost down.

引用

页码：626 / +

页数：2

共 15 条

[1]

Becher D., 2002, 2002 GaAs MANTECH Conference. Digest of Papers, P54

[2] Techniques to study the reliability of metal RF MEMS capacitive switches. [J].

De Wolf, I ;

van Spengen, WM .

MICROELECTRONICS RELIABILITY, 2002, 42 (9-11) :1789-1794

[3]

DEMOOR P, IMAPS 5 TOP WORKSH M

[4]

FOREHAND DI, 2005, 2005 GOV MICR APPL C

[5]

GOLDSMITH C, 1995, IEEE MTT-S, P91, DOI 10.1109/MWSYM.1995.406090

[6]

JOURDAIN A, 2001, EUR MICR C LOND, P403

[7]

JOURDAIN A, MEMS 2002 IEEE INT C, P677

[8]

KETTERL T, 2005, 2005 EUR MICR C PAR, P701

[9]

Maciel J., 2005, P 2005 IEEE MTT S IN

[10]

Mercado LL, 2003, ELEC COMP C, P377

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