Origin of temperature dependence of exciton radiative lifetime of GaN studied by phononic-excitonic-radiative model

被引：2
作者：
Chizaki, Masaya [1 ]
Oki, Kensuke [1 ]
Ishitani, Yoshihiro [1 ]
机构：
[1] Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, 1-33 Yayoicho, Chiba 2638522, Japan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 148卷
基金：
日本学术振兴会;
关键词：
Exciton; Phonon; Radiative lifetime; Nonradiative recombination; Carrier trapping; Bound exciton; LINEWIDTH; STATES;
D O I：
10.1016/j.mssp.2022.106794
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is theoretically accepted that the temperature (T) dependence of the exciton radiative lifetime is proportional to 3/2 power of the temperature. However, the various experimental temperature dependence of the exciton lifetime has been reported for samples with different crystal qualities, and it is not clear which factor of crystal quality determines the temperature dependence of the exciton radiative lifetime. We calculated the exciton radiative lifetime using the phononic-excitonic-radiative model, which is an analytical model that integrates excitons of various principal quantum numbers, free carriers, and phonons. For the components determining the crystal quality, the effects of nonradiative recombination, carrier trapping, bound excitons, exciton-polaritons, and energy-level broadening on the exciton radiative lifetime are considered. Our calculation model fits the experimental radiative lifetime roughly proportional to T3/2 in a wide range from cryogenic to room temperature and also minor deviation from the T3/2 dependence. We show that the exciton radiative lifetime reflects the effects of crystal quality, whereas conventional theories suggest that it is due to the momentum distribution of excitons.
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页数：9
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共 31 条
  • [1] Temperature dependence of the radiative lifetime in GaN
    Brandt, O
    Ringling, J
    Ploog, KH
    Wünsche, HJ
    Henneberger, F
    [J]. PHYSICAL REVIEW B, 1998, 58 (24): : 15977 - 15980
  • [2] Intra-excitonic relaxation dynamics in ZnO
    Chernikov, Alexej
    Koch, Martin
    Laumer, Bernhard
    Wassner, Thomas A.
    Eickhoff, Martin
    Koch, Stephan W.
    Chatterjee, Sangam
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (23)
  • [3] The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
    Chichibu, S. F.
    Uedono, A.
    Kojima, K.
    Ikeda, H.
    Fujito, K.
    Takashima, S.
    Edo, M.
    Ueno, K.
    Ishibashi, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)
  • [4] Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy
    Chichibu, S. F.
    Hazu, K.
    Ishikawa, Y.
    Tashiro, M.
    Namita, H.
    Nagao, S.
    Fujito, K.
    Uedono, A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)
  • [5] Effect of phononic and electron collisional interaction on temperature dependent exciton radiation dynamics of doped GaN
    Chizaki, Masaya
    Oki, Kensuke
    Ishitani, Yoshihiro
    [J]. JOURNAL OF LUMINESCENCE, 2022, 243
  • [6] Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN
    Corfdir, P.
    Dussaigne, A.
    Teisseyre, H.
    Suski, T.
    Grzegory, I.
    Lefebvre, P.
    Giraud, E.
    Ganiere, J. -D.
    Grandjean, N.
    Deveaud-Pledran, B.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)
  • [7] The rate of radiative recombination in the nitride semiconductors and alloys
    Dmitriev, A
    Oruzheinikov, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) : 3241 - 3246
  • [8] Carrier trapping and recombination at carbon defects in bulk GaN crystals grown by HVPE
    Fang, Yu
    Wu, Xingzhi
    Yang, Junyi
    Wang, Jianping
    Wu, Quanying
    Song, Yinglin
    [J]. APPLIED PHYSICS LETTERS, 2021, 118 (11)
  • [9] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS
    FELDMANN, J
    PETER, G
    GOBEL, EO
    DAWSON, P
    MOORE, K
    FOXON, C
    ELLIOTT, RJ
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (20) : 2337 - 2340
  • [10] Fujimoto T., 2004, Plasma Spectroscopy, DOI [10.1093/acprof:oso/9780198530282.001.0001, DOI 10.1093/ACPROF:OSO/9780198530282.001.0001]
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