A new edge termination technique for SiC power devices

SiC is a promising material for future power semiconductor devices due to its superior material property. Edge termination for SiC power devices remains a subject of significant interest. In this paper, available edge termination techniques are briefly reviewed and various field plate termination techniques are systematically studied. Field plate termination techniques have the advantage of being simple with fabrication process and that it avoids defects induced reverse leakage current associated with implantation based JTE terminations. It is revealed in detail for the first time that severe electric field crowding in the oxide for field plate technique will cause reliability concern and limit device breakdown voltage. Based on the analysis, a new technique is proposed to minimize field crowding in the dielectric material. Dielectric reliability concerns are alleviated and a relatively high percentage of ideal breakdown voltage is achieved with the proposed termination structure. The proposed structure is simple and can be a promising termination technology for SiC power semiconductor devices. (C) 2004 Elsevier Ltd. All rights reserved.