32 x 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry

被引：14

作者：

Han, Sangyoon ^{[1
,2
]}

Beguelin, Jeremy ^{[2
,3
]}

Ochikubo, Lane ^{[4
]}

Jacobs, John ^{[4
]}

Seok, Tae J. ^{[2
,5
]}

Yu, Kyoungsik ^{[2
,6
]}

Quack, Niels ^{[2
,7
]}

Kim, Chang-Kyu ^{[2
,8
]}

Muller, Richard S. ^{[2
]}

Wu, Ming C. ^{[2
]}

机构：

[1] Daegu Gyeongbuk Inst Sci & Technol, Dept Robot Engn, Daegu, South Korea

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[3] SUSS MicroOpt SA, Hauterive, Switzerland

[4] TSI Semicond, Roseville, CA USA

[5] Gwangju Inst Sci & Technol, Sch Elect Engn & Comp Sci, Gwangju, South Korea

[6] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon, South Korea

[7] Ecole Polytech Fed Lausanne, Inst Microengn, Lausanne, Switzerland

[8] Korea Polytech Univ, Dept Nano & Semicond Engn, Shihung, South Korea

来源：

JOURNAL OF OPTICAL MICROSYSTEMS | 2021年 / 1卷 / 02期

基金：

美国国家科学基金会;

关键词：

silicon photonics; micro-electro-mechanical-system; switch; foundry; directional coupler;

D O I：

10.1117/1.JOM.1.2.024003

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on a 32 x 32 silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The switch is fabricated on 200-mm silicon-on-insulator wafers in a commercial complementary metal-oxide-semiconductor (CMOS) foundry. The fabricated device has a maximum on-chip loss of 7.7 dB and an extinction ratio of 50.8 dB. The switching voltage is 9.45 Vand the 20-dB bandwidth is 28.7 nm. Our work shows a promising path for mass production of silicon photonic MEMS switches in commercial CMOS foundries. (C) The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License.

引用

页数：9

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