InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer

Extremely compact low-loss four channel arrayed waveguide grating (AWG) with a channel spacing of 600 GHz was demonstrated with InP-based photonic wire waveguides using III-V semiconductor on insulator (III-V-OI) on Si wafer. The III-V-OI substrate was fabricated by direct wafer bonding of an InGaAsP/InP wafer to a thermally oxidized Si wafer. The InGaAsP ultrahigh index contrast photonic wire waveguide allowed the size reduction of the AWG down to 147 x 92 mu m(2). The measured insertion loss was approximately 6 dB and the crosstalk of around -10 dB was obtained. The transmission power nonuniformity of the four wavelength channel was less than 1 dB. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.122201