Detection of stacking faults in 6H-SiC by Raman scattering

被引：62

作者：

Nakashima, S

Nakatake, Y

Harima, H

Katsuno, M

Ohtani, N

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Osaka Univ, Grad Sch, Dept Appl Phys, Osaka 5650871, Japan

[3] Nippon Steel Corp Ltd, Adv Technol Res Labs, Chiba 2938511, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期

关键词：

D O I：

10.1063/1.1329629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra of 6H-SiC crystals including stacking faults have been examined for the c face using backscattering geometry. The intensity of the transverse optical phonon band at 796 cm(-1), which corresponds to the phonon mode at the Gamma point in 3C-SiC, is sensitive to the stacking faults. We found that the intensity of this band depends on the stacking fault density. This is explained based on the bond polarizability model. The spatial distribution of the stacking faults is studied by Raman image measurement. (C) 2000 American Institute of Physics. [S0003-6951(00)00249-7].

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页码：3612 / 3614

页数：3

相关论文

共 15 条

[1] HETEROEPITAXIAL GROWTH OF BETA-SIC FILMS ON TIC SUBSTRATES - INTERFACE STRUCTURES AND DEFECTS [J].

CHIEN, FR ;

NUTT, SR ;

CARULLI, JM ;

BUCHAN, N ;

BEETZ, CP ;

YOO, WS .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (08) :2086-2095

[2] Raman-scattering assessment of Si+-implantation damage in InP [J].

Cusco, R ;

Talamas, G ;

Artus, L ;

Martin, JM ;

GonzalesDiaz, G .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :3927-3929

[3] Stacking faults in group-IV crystals: An ab initio study [J].

Kackell, P ;

Furthmuller, J ;

Bechstedt, F .

PHYSICAL REVIEW B, 1998, 58 (03) :1326-1330

[4] Raman scattering in ion-implanted GaN [J].

Limmer, W ;

Ritter, W ;

Sauer, R ;

Mensching, B ;

Liu, C ;

Rauschenbach, B .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2589-2591

[5] PHONON RAMAN-SCATTERING IN DISORDERED SILICON CARBIDES [J].

NAKASHIMA, S ;

OHTA, H ;

HANGYO, M ;

PALOSZ, B .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (04) :971-985

[6] RAMAN INTENSITY PROFILES AND THE STACKING STRUCTURE IN SIC POLYTYPES [J].

NAKASHIMA, S ;

HANGYO, M .

SOLID STATE COMMUNICATIONS, 1991, 80 (01) :21-24

[7] RAMAN-SCATTERING DETERMINATION OF STRUCTURES FOR SIC POLYTYPES - QUANTITATIVE-EVALUATION WITH A REVISED MODEL OF LATTICE-DYNAMICS [J].

NAKASHIMA, S ;

TAHARA, K .

PHYSICAL REVIEW B, 1989, 40 (09) :6339-6344

[8] Raman scattering of disordered SiC [J].

Nakashima, S ;

Kisoda, K ;

Niizuma, H ;

Harima, H .

PHYSICA B-CONDENSED MATTER, 1996, 219-20 :371-373

[9] RELATIVE RAMAN INTENSITIES OF THE FOLDED MODES IN SIC POLYTYPES [J].

NAKASHIMA, S ;

KATAHAMA, H ;

NAKAKURA, Y ;

MITSUISHI, A .

PHYSICAL REVIEW B, 1986, 33 (08) :5721-5729

[10] RAMAN-SCATTERING CHARACTERIZATION OF GA1-XALXAS/GAAS HETEROJUNCTIONS - EPILAYER AND INTERFACE [J].

PARAYANTHAL, P ;

POLLAK, FH ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :961-963