Formation mechanism of Cu/Cu3Sn-Cu/Cu interconnections based on solder-filled microporous copper as interlayer via a current-assisted thermal compression bonding

被引：2

作者：

Li, Xiang ^{[1
]}

Sun, Fenglian ^{[1
]}

Pan, Zhen ^{[1
]}

机构：

[1] Harbin Univ Sci & Technol, Sch Mat Sci & Engn, Harbin, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2021年 / 35卷 / 20期

关键词：

Current-assisted thermal compression bonding; microporous copper; Cu-Sn IMCs; electromigration; constitutive equation; INTERMETALLIC COMPOUNDS; TEMPERATURE; JOINTS; ELECTROMIGRATION; DIFFUSION; CU6SN5; SYSTEM;

D O I：

10.1142/S021798492150322X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, a Cu/Cu3Sn-Cu/Cu interconnection can be achieved based on solder-filled microporous copper (MPC) as interlayer via a current-assisted thermal compression bonding. The high-temperature soldering connection materials can be used in the third-generation semiconductor packaging, so as to meet the promising application in high-temperature power device packaging. The influence of auxiliary current on the microstructure evolution of Cu-Sn IMCs and its formation mechanism were studied. Experiments show that the action of Joule heat coupled with the electron wind significantly enhanced the interfacial reaction at the Cu/Sn metallization interface. The microstructure of Cu6Sn5 changed from scallop-like into columnar due to constitutional supercooling, and the dispersion distribution of Cu6Sn5 also changed. The growth constitutive equations of Cu3Sn in bondlines were established under current-assisted thermal compression bonding process.

引用

页数：16

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