Reflectance bandwidth and efficiency improvement of light-emitting diodes with double-distributed Bragg reflector

被引:34
作者
Ding, Xinghuo [1 ]
Gui, Chengqun [1 ]
Hu, Hongpo [1 ]
Liu, Mengling [1 ]
Liu, Xingtong [1 ]
Lv, Jiajiang [1 ]
Zhou, Shengjun [1 ]
机构
[1] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Peoples R China
基金
中国国家自然科学基金;
关键词
LEDS; BACKSIDE; MIRROR; ENHANCEMENT; INCREASE; OUTPUT; POWER;
D O I
10.1364/AO.56.004375
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Distributed Bragg reflectors (DBR) with metal film on the bottom have been demonstrated to further improve the light output power of GaN-based light-emitting diodes (LEDs). Periods of TiO2/SiO2 stacks, thickness of metal film, and material of metallic reflector were designed and optimized in simulation software. The maximal bandwidth of double-DBR stacks have reached up to 272 nm, which was 102 nm higher than a single-DBR stack. The average reflectance of LEDs with wavelength from 380 nm to 780 nm in double-DBR stacks is 95.09% at normal incident, which was much higher than that of a single-DBR stack whose average reflectance was 91.38%. Meanwhile, maximal average reflectance of LEDs for double-DBR stacks with an incident angle from 0 to 90 degrees was 97.41%, which was 3.2% higher than that of a single-DBR stack with maximal average reflectance of 94.21%. The light output power of an LED with double-DBR stacks is 3% higher than that of an LED with a single-DBR stack, which was attributed to high reflectance of double-DBR stacks. (C) 2017 Optical Society of America
引用
收藏
页码:4375 / 4380
页数:6
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