Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation

被引：14

作者：

Alizadeh, M. ^{[1
]}

Ganesh, V. ^{[1
]}

Goh, B. T. ^{[1
]}

Dee, C. F. ^{[2
]}

Mohmad, A. R. ^{[2
]}

Rahman, S. A. ^{[1
]}

机构：

[1] Univ Malaya, Dept Phys, Low Dimens Mat Res Ctr, Fac Sci, Kuala Lumpur 50603, Malaysia

[2] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelectron IMEN, Bangi 43600, Selangor, Malaysia

来源：

APPLIED SURFACE SCIENCE | 2016年 / 378卷

关键词：

InxAl1-xN; Plasma-assisted deposition; Raman spectra; Band gap; ELECTRICAL-PROPERTIES; ENERGY; NANOCOLUMNS; ABSORPTION; SURFACE; UNIFORM;

D O I：

10.1016/j.apsusc.2016.03.174

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In-rich In(x)Al(1-)xN thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV-vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the InxAl1-xN films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the InxAl1-xN films showed that by increasing the N-2 flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich InxAl1-xN films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90-1.17 eV which is desirable for the application of full spectra solar cells. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：150 / 156

页数：7

共 43 条

[1] Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation [J].