Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering

被引：28

作者：

Gong, Li ^{[1
]}

Lu, Jianguo ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Zinc oxide; Radio frequency magnetron sputtering; Transparent conductive oxides; Polycarbonate; Buffer layer; ZNO BUFFER LAYER; THIN-FILMS; OXIDE FILMS; ELECTRICAL-PROPERTIES; THICKNESS DEPENDENCE; AL FILMS; TRANSPARENT;

D O I：

10.1016/j.solmat.2010.03.026

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Gallium-doped zinc oxide (GZO) films have been grown on polycarbonate (PC) substrates with and without ZnO buffer layers by radio frequency (r.f.) magnetron sputtering at room temperature. The optimization of growth parameters (sputtering power, sputtering pressure, sputtering time, oxygen partial pressure ratio) on ZnO buffer layers with multiple qualities based on the orthogonal array has been studied. The optimal parameter of the ZnO buffer layer could be obtained according to the range analysis method. The lowest electrical resistivity of GZO/ZnO/PC films is about 5.21 x 10(-4) Omega cm, and the transmittance in the visible range is about 80%. using air as reference. The good transparency-conducting property and the room-temperature depositon on polymeric substrates enable GZO films to be widely used in flexible optoelectronic devices such as thin film solar cells. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1282 / 1285

页数：4

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