Self-assembled Ge/Si hetero-nanocrystals for nonvolatile memory application

被引：6

作者：

Li, Bei ^{[1
]}

Liu, Jianlin ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

THIN SOLID FILMS | 2010年 / 518卷

基金：

美国国家科学基金会;

关键词：

Self-assembly; Ge/Si hetero-nanocrystal; MOS memory; PERFORMANCE; IMPACT;

D O I：

10.1016/j.tsf.2009.10.103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, Ge/Si hetero-nanocrystals are used as floating gates for nonvolatile memory application. The nanocrystals were fabricated by Ge selective growth on Si nanocrystals in a chemical vapor deposition system. The scanning electron microscopy measurement affirms the density and size of the nanocrystals to be 6 x 10(11) cm(-2) and 7 nm, respectively. Metal-oxide-semiconductor memory with Ge/Si hetero-nanocrystals and Si nanocrystals were fabricated and characterized. Significant hole retention enhancement was observed in Ge/Si hetero-nanocrystal memory. This performance enhancement is attributed to the quantum well formed between Ge and Si valance band, where holes are preferentially stored. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S262 / S265

页数：4

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