Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

被引：25

作者：

Esaev, DG ^{[1
]}

Matsik, SG

Rinzan, MBM

Perera, AGU

Liu, HC

Buchanan, M

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.1539918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature absorption and reflection spectra in the range of 5-100 mum (3-60 THz) for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors are presented. Calculated results based on the free carrier absorption and interaction with optical phonons are found to be in good agreement with the experimental results. Experimental responsivity spectra demonstrate the expected maxima from the absorption measurements due to resonant cavity effects. It is shown that the resonance cavity architecture enhances the performance of the FIR HEIWIP detectors and further improvement is proposed through the use of n(++) and p(++) bottom contact layers or doped substrates. (C) 2003 American Institute of Physics.

引用

页码：1879 / 1883

页数：5

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