Coordination of yttrium in rf-sputtered amorphous films in the system SiO2-Y2O3

被引:2
|
作者
Shinoda, T
Hanada, T [1 ]
Tanabe, S
Yao, T
机构
[1] Kyoto Univ, Grad Sch Human & Environm Studies, Sakyo Ku, Kyoto 60601, Japan
[2] Kyoto Univ, Dept Integrated Human Studies, Sakyo Ku, Kyoto 60601, Japan
[3] Kyoto Univ, Grad Sch Energy Sci, Sakyo Ku, Kyoto 60601, Japan
关键词
D O I
10.1016/S0022-3093(97)00419-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Extended X-ray absorption fine structure near the Y Ii-edge was measured to determine the coordination state of yttrium ions in amorphous films in the system SiO2-Y2O3 prepared by rf-sputtering. The coordination number of yttrium inns in the amorphous films with < 30 mol% Y2O3 content was greater than sis, but it approached six, dependent on the Y2O3 content, in the region > 35 mol% Y2O3 content. That is, the region between about 35 mol% and about 50 mol% Y2O3 content is the transition stage of the change of the coordination number of yttrium ions. This result of the coordination state of yttrium ions has given a direct proof for the prediction that the coordination state of yttrium ions changes at about 45 mol% Y2O3 content in SiO2-Y2O3 amorphous films, which was obtained from our previous study about their physical properties, such as density and elastic-moduli. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:302 / 306
页数:5
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