Tuning photoluminescence of single InAs quantum dot by electric field

被引：1
|
作者：
Chang Xiu-Ying [1 ]
Dou Xiu-Ming [1 ]
Sun Bao-Quan [1 ]
Xiong Yong-Hua [1 ]
Ni Hai-Qiao [1 ]
Niu Zhi-Chuan [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
ACTA PHYSICA SINICA | 2010年 / 59卷 / 06期
基金：
中国国家自然科学基金;
关键词：
single InAs quantum dot; Stark effect; electron-hole separation;
D O I：
10.7498/aps.59.4279
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-1-n structure have been studied under an applied electric field With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.
引用
收藏
页码：4279 / 4282
页数：4
相关论文
共 17 条
  • [1] Awschalom DD, 2002, NANOSCI TECHNOL, P147
  • [2] Electrical control of the uncertainty in the time of single photon emission events
    Bennett, AJ
    Unitt, DC
    See, P
    Shields, AJ
    Atkinson, P
    Cooper, K
    Ritchie, DA
    [J]. PHYSICAL REVIEW B, 2005, 72 (03):
  • [3] Competition between carrier recombination and tunneling in quantum dots and rings under the action of electric fields
    Bosch, J.
    Alen, B.
    Martinez-Pastor, J.
    Granados, D.
    Garcia, J. M.
    Gonzalez, L.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2008, 43 (5-6) : 582 - 587
  • [4] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS
    DREXLER, H
    LEONARD, D
    HANSEN, W
    KOTTHAUS, JP
    PETROFF, PM
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (16) : 2252 - 2255
  • [5] Controlled generation of neutral, negatively-charged and positively-charged excitons in the same single quantum dot - art. no. 2119209
    Ediger, M
    Dalgarno, PA
    Smith, JM
    Gerardot, BD
    Warburton, RJ
    Karrai, K
    Petroff, PM
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3
  • [6] Photocurrent and photoluminescence of a single self-assembled quantum dot in electric fields
    Findeis, F
    Baier, M
    Beham, E
    Zrenner, A
    Abstreiter, G
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2958 - 2960
  • [7] Quantum-confined Stark shifts of charged exciton complexes in quantum dots
    Finley, JJ
    Sabathil, M
    Vogl, P
    Abstreiter, G
    Oulton, R
    Tartakovskii, AI
    Mowbray, DJ
    Skolnick, MS
    Liew, SL
    Cullis, AG
    Hopkinson, M
    [J]. PHYSICAL REVIEW B, 2004, 70 (20): : 201308 - 1
  • [8] Fine structure splitting in the optical spectra of single GaAs quantum dots
    Gammon, D
    Snow, ES
    Shanabrook, BV
    Katzer, DS
    Park, D
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (16) : 3005 - 3008
  • [9] GU BJ, 2008, ACTA PHYS SINICA, V57, P689
  • [10] Luminescence quenching in InAs quantum dots
    Haft, D
    Warburton, RJ
    Karrai, K
    Huant, S
    Medeiros-Ribeiro, G
    Garcia, JM
    Schoenfeld, W
    Petroff, PM
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2946 - 2948
12