High Resolution Optical Frequency Domain Reflectometry for Analyzing Intra-Chip Reflections

被引：27
|
作者：
Zhao, Dan [1 ]
Pustakhod, Dzmitry [1 ]
Williams, Kevin [1 ]
Leijtens, Xaveer [1 ]
机构：
[1] Eindhoven Univ Technol, COBRA Res Inst, NL-5612 AJ Eindhoven, Netherlands
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2017年 / 29卷 / 16期
关键词：
OFDR; photonic integrated circuits; reflection coefficient; spatial resolution; WAVE-GUIDES; COMPONENTS; INDEX; PHASE;
D O I：
10.1109/LPT.2017.2723242
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a method for high-resolution optical frequency domain reflectometry by de-embedding group-velocity dispersion in the device under test. The method is shown to provide an accurate estimation of the wavelength-dependent group refractive index, and provides a spatial resolution of 5.3 +/- 1.7 mu m for intra-chip reflections. We applied this method to characterize localized reflections from a number of waveguide crossings. The minimum distance of 30 mu m between two crossings could easily be resolved. The reflection of waveguide crossings was analyzed to be (2.5 +/- 1.2) . 10(-6).
引用
收藏
页码：1379 / 1382
页数：4
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