High Resolution Optical Frequency Domain Reflectometry for Analyzing Intra-Chip Reflections

被引：27

作者：

Zhao, Dan ^{[1
]}

Pustakhod, Dzmitry ^{[1
]}

Williams, Kevin ^{[1
]}

Leijtens, Xaveer ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA Res Inst, NL-5612 AJ Eindhoven, Netherlands

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2017年 / 29卷 / 16期

关键词：

OFDR; photonic integrated circuits; reflection coefficient; spatial resolution; WAVE-GUIDES; COMPONENTS; INDEX; PHASE;

D O I：

10.1109/LPT.2017.2723242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a method for high-resolution optical frequency domain reflectometry by de-embedding group-velocity dispersion in the device under test. The method is shown to provide an accurate estimation of the wavelength-dependent group refractive index, and provides a spatial resolution of 5.3 +/- 1.7 mu m for intra-chip reflections. We applied this method to characterize localized reflections from a number of waveguide crossings. The minimum distance of 30 mu m between two crossings could easily be resolved. The reflection of waveguide crossings was analyzed to be (2.5 +/- 1.2) . 10(-6).

引用

页码：1379 / 1382

页数：4

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