A Self-Consistent SDD-NEGF Approach for Modelling Magnetic Tunnel Junctions

被引：0

作者：

Siu, Z. B. ^{[1
,2
,3
]}

Jalil, M. B. A. ^{[4
,5
]}

Tan, S. G. ^{[3
,5
]}

Wang, J. -S. ^{[1
,2
,6
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore

[3] Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab, Singapore 117576, Singapore

[5] Natl Univ Singapore, Dept Elect & Comp Engn, Computat Nanoelect & Nanodevice Lab, Singapore 117576, Singapore

[6] Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2010年 / 46卷 / 06期

关键词：

Magnetic tunnel junctions; non-equilibrium Green's function; spin diffusion drift; GIANT MAGNETORESISTANCE;

D O I：

10.1109/TMAG.2010.2044979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Most contemporary work on magnetic tunnel junctions either consider ballistic quantum transport across the tunneling barrer, for instance via the Non Equilibrium Green's Function (NEGF) formalism, or treat the tunneling region as a lump resistance connected to bulk metallic leads in the Spin Drift-Diffusion (SDD) approach. The effects of interfacial barriers and central device physics on the spin accumlation in the leads have largely been ignored in most NEGF calculations. In this work we introduce a self consistent approach that combines the NEGF and SDD methods. We calculate the effects of the barrier potential height and spin orbit interaction on the spin injection from a ferromagnet to a semiconductor through the barrier.

引用

页码：1591 / 1594

页数：4

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