Conductive tail-to-tail domain walls in epitaxial BiFeO3 films

被引：16

作者：

Jin, Yaming ^{[1
,2
]}

Xiao, Shuyu ^{[1
,2
]}

Yang, Jan-Chi ^{[3
]}

Zhang, Junting ^{[4
]}

Lu, Xiaomei ^{[1
,2
,5
]}

Chu, Ying-Hao ^{[6
]}

Cheong, S. -W. ^{[7
,8
]}

Li, Jiangyu ^{[9
,10
]}

Kan, Yi ^{[1
,2
]}

Yue, Chen ^{[1
,2
]}

Li, Yang ^{[1
,2
]}

Ju, Changcheng ^{[1
,2
]}

Huang, Fengzhen ^{[1
,2
,5
]}

Zhu, Jinsong ^{[1
,2
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Phys Sch, Nanjing 210093, Jiangsu, Peoples R China

[3] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan

[4] China Univ Min & Technol, Dept Phys, Xuzhou 221116, Jiangsu, Peoples R China

[5] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[6] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[7] Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA

[8] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[9] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Key Lab Nanobiomech, Shenzhen 518055, Guangdong, Peoples R China

[10] Univ Washington, Dept Mech Engn, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Ferroelectric films - Iron compounds - Bismuth compounds - Conductive films - Ferroelectricity;

D O I：

10.1063/1.5045721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71 degrees domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices. Published by AIP Publishing.

引用

页数：5