Sterilization of medical products in low-pressure glow discharges

被引：94

作者：

Soloshenko, IA ^{[1
]}

Tsiolko, VV ^{[1
]}

Khomich, VA ^{[1
]}

Shchedrin, AI ^{[1
]}

Ryabtsev, AV ^{[1
]}

Bazhenov, VY ^{[1
]}

Mikhno, IL ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Phys, UA-03039 Kiev, Ukraine

来源：

PLASMA PHYSICS REPORTS | 2000年 / 26卷 / 09期

关键词：

D O I：

10.1134/1.1309476

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Results are presented from experimental and theoretical studies of the sterilization of medical products by the plasmas of de glow discharges in different gas media. The sterilization efficiency is obtained as a function of discharge parameters. The plasma composition in discharges in N-2 and O-2 is investigated under the operating conditions of a plasma sterilizer. It is shown that free surfaces of medical products are sterilized primarily by UV radiation from the discharge plasma, while an important role in sterilization of products with complicated shapes is played by such chemically active particles as oxygen atoms and electronically excited O-2 molecules. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：792 / 800

页数：9

共 24 条

[1] EMISSION CROSS SECTIONS OF N2 IN VACUUM ULTRAVIOLET BY ELECTRON IMPACT [J].

AJELLO, JM .

JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (03) :1156-&

[2]

[Anonymous], [No title captured]

[3]

BERSIN R, Patent No. 3410776

[4]

Druyvesteyn M J, 1930, Z PHYS, V54, P790

[5]

ELITSKII AV, 1975, TRANSPORT PHENOMENA, pCH5

[6] Electron-impact excitation of the second positive band system (C-3 Pi(u)->B-3 Pi(g)) and the C-3 Pi(u) electronic state of the nitrogen molecule [J].

Fons, JT ;

Schappe, RS ;

Lin, CC .

PHYSICAL REVIEW A, 1996, 53 (04) :2239-2247

[7] Low-energy electron impact excitation of the nitrogen molecule: Optically forbidden transitions [J].

Gillan, CJ ;

Tennyson, J ;

McLaughlin, BM ;

Burke, PG .

JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1996, 29 (08) :1531-1547

[8]

Golovinskii P. M., 1989, Soviet Physics - Technical Physics, V34, P159

[9]

Goretskii V. P., 1993, Technical Physics, V38, P762

[10]

GOUSSET G, 1991, J PHYS D APPL PHYS, V24, P290, DOI 10.1088/0022-3727/24/3/010

← 1 2 3 →